Effect of current crowding on vacancy diffusion and void formation in electromigration

King-Ning Tu*, C. C. Yeh, C. Y. Liu, Chih Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

116 Scopus citations

Abstract

In multilevel interconnects, current crowding occurs whenever the current changes direction, such as when passing through a via. We propose that in current crowding, the current-density gradient can exert a driving force strong enough to cause excess vacancies (point defects) to migrate from high to low current-density regions. This leads to void formation in the latter. This is a key feature of electromigration-induced damage in very large scale integrated interconnects.

Original languageEnglish
Pages (from-to)988-990
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number8
DOIs
StatePublished - 21 Feb 2000

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