Effect of crystalline quality on photovoltaic performance for In 0.17 Ga 0.83 As solar cell using X-Ray reciprocal space mapping

Ming Chun Tseng*, Ray-Hua Horng, Dong Sing Wuu, Min De Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

This paper presents the In 0.17 Ga 0.83 As solar cell grown on misoriented GaAs substrate (2°-and 15°-off) by metalorganic chemical vapor deposition. The crystalline quality of the In 0.17 Ga 0.83 As solar cell is determined by X-Ray reciprocal space mapping (RSM). RSM results show that the crystalline quality of In 0.17 Ga 0.83 As solar cell grown on 2°-off GaAs substrate is better than that of 15°-off GaAs substrate. Moreover, the photovoltaic performance of In 0.17 Ga 0.83 As solar cell grown on 2°-off GaAs substrate is found to be better than that of In 0.17 Ga 0.83 As solar cell grown on a 15°-off GaAs substrate, because the In x Ga 1-x As epilayer grown on 15°-off GaAs substrate shows a large strain relaxation in the active layer of the solar cell. A large strain relaxation causes high dislocation density at the initial active layer/In x Ga 1-x As graded layer interface for the solar cell grown on 15°-off GaAs substrate. The effect of dislocation defects on the solar cell performance can be alleviated using the p-i-n structure as the epilayer grown on 15°-off GaAs substrate.

Original languageEnglish
Article number6006499
Pages (from-to)1434-1442
Number of pages9
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number11
DOIs
StatePublished - 19 Oct 2011

Keywords

  • InGaAs crystalline quality
  • solar cell
  • X-Ray reciprocal space mapping

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