Effect of copper on gate oxide integrity

Y. H. Lin*, Y. H. Wu, Albert Chin, Fu-Ming Pan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We have studied the effect of copper contamination after the front-end metal-oxide-semiconductor capacitor fabrication on gate oxide integrity. The significant effect of Cu contamination on the pretunneling current, in combination with insensitive dependence of the Fowler-Nordheim tunneling current, oxide charge density, and breakdown field on the Cu concentration, suggests that the current leakage mechanism may be due to neutral traps generated by Cu inside oxide. In addition to pretunneling oxide leakage, a small amount of Cu contamination increases the interface trap density that may degrade the device performance.

Original languageEnglish
Pages (from-to)4305-4306
Number of pages2
JournalJournal of the Electrochemical Society
Volume147
Issue number11
DOIs
StatePublished - 1 Nov 2000

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