Highly (002) textured Pb(ScTa)1-xTixO3 (PSTT) (with x = 0-0.3) thin films were grown on LaNiO3 buffered Si substrates using metal-organic chemical vapor deposition (MOCVD) technique at temperatures ranging from 600 to 685°C. Dielectric properties showed strong dependency on the growth temperature and PT content. Ti addition acted as a "Curie" temperature shifter and increased the dielectric constants. Dielectric dispersion behavior was observed, along with a diffuse phase transition, characterizing the relaxor properties of PSTT.
- dielectric dispersion
- growth temperature