Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD

Chun-Hsiung Lin, P. A. Friddle, C. H. Ma, Haydn Chen

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Abstract

Highly (002) textured Pb(ScTa)1-xTixO3 (PSTT) (with x = 0-0.3) thin films were grown on LaNiO3 buffered Si substrates using metal-organic chemical vapor deposition (MOCVD) technique at temperatures ranging from 600 to 685°C. Dielectric properties showed strong dependency on the growth temperature and PT content. Ti addition acted as a "Curie" temperature shifter and increased the dielectric constants. Dielectric dispersion behavior was observed, along with a diffuse phase transition, characterizing the relaxor properties of PSTT.

Original languageEnglish
Pages (from-to)229-238
Number of pages10
JournalFerroelectrics
Volume259
Issue number1
DOIs
StatePublished - 1 Dec 2001
Event3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China
Duration: 12 Dec 200015 Dec 2000

Keywords

  • composition
  • dielectric dispersion
  • growth temperature
  • Relaxor

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