Abstract
This is the first paper to discuss the ON-state drain-current of a special thin-film transistor structure with a wide channel width and a narrow source/drain width in the linear region. The experimental results indicate that when the channel width is wider than the source/drain width, the side-channel current effect is generated. This effect increases the ON-state drain-current due to the additional current-flow paths existing in the side-channel regions and low channel resistance. As the side-channel width increases, the ON-state drain-current initially increases and then gradually becomes independent of the side-channel width when the side-channel width is larger than the effective side-channel width, which depends on the channel width and is largely independent of the source/drain width. This paper also demonstrates that the ON-state drain-current gain is directly proportional to the channel length and the ratio of the channel length to the source/drain width and dependent on the side-channel width.
Original language | English |
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Pages (from-to) | 2418-2425 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 54 |
Issue number | 9 |
DOIs | |
State | Published - 1 Sep 2007 |
Keywords
- Drain-current
- Poly-Si thin-film transistor (TFT)
- Source/drain width
- Wide channel width