This study describes a novel technique for forming low temperature oxides (< 350°C) using a replacement metal gate process. Low temperature oxides were generated by N 2 O plasma in a PECVD system with pretreatment in CF 4 . Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF 4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices.
- Low temperature oxides
- Mobility and hot carrier stress
- N O/CF plasma
- Replacement metal gate