Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition

Y. L. Cheng*, Y. L. Wang, J. K. Lan, H. C. Chen, J. H. Lin, Y. L. Wu, Po-Tsun Liu, Yew-Chuhg Wu, M. S. Feng

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

For a low dielectric constant inter-metal dielectric application, the low-A: SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition (PE-CVD) with trimethylsilane (3MS), oxygen, and the carrier gas. In this work, we present the effects of the carrier gas on the characterizations of the low-k films, including reaction mechanism, the deposition rate, and the mechanical and electrical properties. According to the experimental results, the low-k film in Ar carrier gas exhibits the improvement in deposition rate, nonuniformity, leakage current, and hardness. In addition, the dielectric constant of the deposited low-k film is slightly sacrificed due to the decrease of micropores in the deposited films.

Original languageEnglish
Pages (from-to)178-183
Number of pages6
JournalThin Solid Films
Volume469-470
Issue numberSPEC. ISS.
DOIs
StatePublished - 22 Dec 2004

Keywords

  • Carrier gas
  • Low-k
  • Plasma-enhanced chemical vapor deposition

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