Effect of carrier distribution on carrier cooling in GaAs/AlGaAs quantum wells

Kien-Wen Sun*, Chu Long Huang, Jyong Wun Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A quantitative study of the effect of carrier-carrier scattering on carrier distribution in two-dimensional systems is carried out by means of calculations using the dynamically screened Boltzmann equation. Photoexcited carrier relaxation processes in both n-type-doped and undoped quantum wells (QWs) are also studied by time-resolved photoluminescence measurements using an up-conversion technique with a high time resolution of approximately 120fs. By measuring the time evolution of the photoluminescence (PL) intensity, the scattering rate of electrons into the conduction band minimum is obtained directly. Our simulations and experimental results demonstrate that the presence of the cool distribution does affect the carrier-carrier scattering rates significantly.

Original languageEnglish
Pages (from-to)4799-4804
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number7 A
DOIs
StatePublished - 8 Jul 2005

Keywords

  • Carrier-carrier scattering
  • Luminescence
  • Quantum wells
  • Time-resolved optical spectroscopies

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