Effect of C F4 plasma on properties and reliability of metal-induced lateral crystallization silicon transistors

Chih Pang Chang; Yew-Chuhg Wu

doi:10.1149/1.3265989

Effect of C F₄ plasma on properties and reliability of metal-induced lateral crystallization silicon transistors

Chih Pang Chang^*, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this study, a C F₄ plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	2
DOIs	https://doi.org/10.1149/1.3265989
State	Published - 15 Jan 2010

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abstract = "In this study, a C F4 plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si.",

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