Effect of C F4 plasma on properties and reliability of metal-induced lateral crystallization silicon transistors

Chih Pang Chang*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this study, a C F4 plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number2
DOIs
StatePublished - 15 Jan 2010

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