Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si

Chia Liang Sun*, San-Yuan Chen, Shi Bai Chen, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La 0.75Ti3O12 (BLT) thin films on Al 2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700°C-950°C increases with increasing annealing temperature. At the highest annealing temperature of 950°C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process.

Original languageEnglish
Pages (from-to)1984-1986
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number11
DOIs
StatePublished - 18 Mar 2002

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