Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor

Chur Shyang Fuh*, Po-Tsun Liu, Wei Hsun Huang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 °C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm2/Vs, threshold voltage (Vth) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 °C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16 × 1017 cm-3 eV-1 and 4.38 × 1012 cm-2 eV-1, respectively. The positive bias stability of 400 °C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.

Original languageEnglish
Article number6899612
Pages (from-to)1103-1105
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number11
DOIs
StatePublished - Nov 2014

Keywords

  • high mobility TFTs
  • In-Zn-Sn-O TFTs

Fingerprint Dive into the research topics of 'Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor'. Together they form a unique fingerprint.

Cite this