Effect of annealing ambient on the characteristics of a-IGZO thin film transistors

Cheng I. Lin*, Tung Wei Yen, Horng-Chih Lin, Tiao Yuan Huang, Yee Shin Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We investigated the characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) whose channel was deposited with different oxygen flows, and were annealed at different annealing temperatures and ambient. This study indicates that annealing in forming gas and oxygen ambient indeed improve the transfer characteristics, resulting in better threshold voltage (Vth) and sub-threshold swing (SS), compared with those by high vacuum annealing.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • a-IGZO
  • annealing ambient
  • TFT

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