Effect of AlN spacer on the AlGaN/GaN HEMT device performance at millimeter-wave frequencies

Chun Wang*, Heng-Tung Hsu, Huang Ting-Jui, Jun Kai Fan, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effect of the AlN spacer on the performance of AlGaN/GaN HEMT devices at 38 GHz is experimentally investigated. The measurement results revealed that the device with spacer showed superior performance in terms of the maximum drain current. RF wise, substantial improvement in the cut-off frequency and the maximum oscillation frequency was also observed for devices with spacer. A saturated output power density of 4.21 W/mm with 35.02% power-added efficiency (PAE) at 38 GHz were achieved for device with 70nm gate length.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1208-1210
Number of pages3
ISBN (Electronic)9784902339451
DOIs
StatePublished - 16 Jan 2019
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 6 Nov 20189 Nov 2018

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2018-November

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
CountryJapan
CityKyoto
Period6/11/189/11/18

Keywords

  • AlGaN/GaN
  • AlN spacer
  • Cut-off frequency
  • HEMT
  • Maximum oscillation frequency

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