Copper is the common materials for the semiconductor industry. Especially, electrodeposited copper is the most widely used for its excellent electrical, physical properties and low cost. However, when the dimensions of Cu interconnections have been continuously reduced, severe increases in the electrical resistivity become a serious problem, known as "size effect". Recently, copper with nanotwinned microstructure is widely studied for its excellent mechanical and electrical property. Beside, nt-Cu can trigger anisotropic grain growth to achieve large grains has been reported previously. This may become a candidate for solving size effect problem. Therefore, how to fabricate different microstructure of nt-Cu film and understand the relationship between the nanotwinned microstructure and grain growth behavior are important.
|Name||International Microsystems Packaging Assembly and Circuits Technology Conference|
|Conference||11th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT-IAAC)|
|Period||26/10/16 → 28/10/16|