The mechanism and characteristics of edge FN stress induced leakage current (SILC) in tunnel oxides are investigated. The dominant SILC mechanism is found to be positive oxide charge assisted electron tunneling. A pronounced transient effect in edge FN SILC is observed. The transient effect arises from that positive oxide charges, which help electrons tunnel through the oxide, can themselves escape to the Si substrate at a positive measurement field. The edge FN SILC can be significantly reduced by using a substrate hot electron injection technique.
|Number of pages||4|
|Journal||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|State||Published - 1 Jan 1999|
|Event||Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
Duration: 7 Jun 1999 → 10 Jun 1999