Edge FN stress induced leakage current in tunnel oxides

Nian Kai Zous*, C. C. Yeh, C. W. Tsai, L. P. Chiang, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The mechanism and characteristics of edge FN stress induced leakage current (SILC) in tunnel oxides are investigated. The dominant SILC mechanism is found to be positive oxide charge assisted electron tunneling. A pronounced transient effect in edge FN SILC is observed. The transient effect arises from that positive oxide charges, which help electrons tunnel through the oxide, can themselves escape to the Si substrate at a positive measurement field. The edge FN SILC can be significantly reduced by using a substrate hot electron injection technique.

Original languageEnglish
Pages (from-to)262-265
Number of pages4
JournalInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 7 Jun 199910 Jun 1999

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