E-T based statistical modeling and compact statistical circuit simulation methodologies

James C. Chen*, Chen-Ming Hu, C. P. Wan, Peter Bendix, Ashok Kapoor

*Corresponding author for this work

Research output: Contribution to journalConference article

24 Scopus citations

Abstract

A new statistical parameter extraction methodology which translates actual process variations into SPICE model parameter variations is presented. This methodology uses E-T data to extract SPICE model parameters and guarantees that its extraction results match measured variations. We have applied this methodology to an industrial 0.5μm process. Excellent, overall I-V curve fit for multiple device geometries is achieved. A compact statistical circuit design technology that improves upon the typical/worst/best case methodology is also presented.

Original languageEnglish
Pages (from-to)635-638
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 8 Dec 199611 Dec 1996

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