A new statistical parameter extraction methodology which translates actual process variations into SPICE model parameter variations is presented. This methodology uses E-T data to extract SPICE model parameters and guarantees that its extraction results match measured variations. We have applied this methodology to an industrial 0.5μm process. Excellent, overall I-V curve fit for multiple device geometries is achieved. A compact statistical circuit design technology that improves upon the typical/worst/best case methodology is also presented.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1996|
|Event||Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 8 Dec 1996 → 11 Dec 1996