E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development

H. K. Lin*, D. W. Fan, Y. C. Lin, P. C. Chiu, C. Y. Chien, Pei-Wen Li, J. I. Chyi, C. H. Ko, T. M. Kuan, M. K. Hsieh, W. C. Lee, C. H. Wann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al2O3 between the gate metal and semiconductor surface and successfully demonstrated DC and RF performance of the InAs/AlSb metal-oxide-semiconductor HEMTs (MOS-HEMTs). An MOS-HEMT device with a 2.0 μm gate length yields DC performance of IDSS = 286 mA/mm and Gm = 495 mS/mm and RF performance of fT = 10.1 GHz and fMAX = 19.9 GHz. Compared with a conventional HEMT, gate leakage is reduced by one order and the marked dependence of drain current on gate bias in the deep subthreshold region is largely alleviated.

Original languageEnglish
Pages (from-to)505-508
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number5
DOIs
StatePublished - 1 May 2010

Keywords

  • Impact ionization
  • InAs
  • MOS-HEMT

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