E-band RF-to-DC converter using Schottky diode in 0.18-μm CMOS technology

Wei Ling Chang, Chin-Chun Meng, Tzu Chien Fu, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper demonstrates a millimeter-wave RF-to-DC converter based on Schottky-barrier diodes using 0.18-μm CMOS technology. The Schottky-barrier diode has a cutoff frequency of 400 GHz and a low turn-on voltage of 0.3 V. In the RF-to-DC quadrupler, the difference in turn-on voltages between the Schottky-barrier diode and n-well to p-substrate parasitic pn junction prevents the pn junction from turning on with an effect similar to the Schottky diode clamp in Schottky TTL circuits. The input matching has a better than 10 dB return loss from 50 GHz to 100 GHz. The RF-to-DC quadrupler generates a 3.15 V DC voltage at 84 GHz.

Original languageEnglish
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
StatePublished - 9 Aug 2016
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: 22 May 201627 May 2016

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
CountryUnited States
CitySan Francisco
Period22/05/1627/05/16

Keywords

  • CMOS
  • millimeter-wave
  • RF-to-DC converter
  • Schottky-barrier diode

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