An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10.3 cm 2 area) and an absolute forward current of 1 A on 8 m thick epitaxial β -Ga 2 O 3 drift layers. The recovery characteristics for these vertical geometry β -Ga 2 O 3 Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.
- Gallium oxide
- Schottky diode