Dynamic Switching Characteristics of 1 A Forward Current β -Ga 2 O 3 Rectifiers

Jiancheng Yang, Fan Ren, Yen Ting Chen, Yu-Te Liao, Chin Wei Chang, Jenshan Lin, Marko J. Tadjer, S. J. Pearton*, Akito Kuramata

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10.3 cm 2 area) and an absolute forward current of 1 A on 8 m thick epitaxial β -Ga 2 O 3 drift layers. The recovery characteristics for these vertical geometry β -Ga 2 O 3 Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.

Original languageEnglish
Article number8502878
Pages (from-to)62-69
Number of pages8
JournalIEEE Journal of the Electron Devices Society
Volume7
DOIs
StatePublished - 23 Oct 2018

Keywords

  • Gallium oxide
  • Schottky diode
  • rectifiers

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