Dynamic stress effects on the reliability of poly-Si TFT

Yan Fu Kuo*, Shih Che Huang, Wei Lun Shih, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The degradation of poly-Si TFT under different gate pulse waveforms is investigated. The mobility degradation is analyzed with the lateral transient electric field and carrier numbers near the channel edges. A proposed index fairly depicts the device degradation, which is helpful in evaluating lifetime for the poly-Si TFT circuits.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages497-499
Number of pages3
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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