Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures

Yu Hsun Hsieh, Chung Hua Chiu, Chun Wei Huang, Jui Yuan Chen, Wan Jhen Lin, Wen-Wei Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.

Original languageEnglish
Pages (from-to)1776-1781
Number of pages6
JournalNanoscale
Volume7
Issue number5
DOIs
StatePublished - 7 Feb 2015

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