Dynamic observation of phase transformation behaviors in indium(iii) selenide nanowire based phase change memory

Yu Ting Huang, Chun Wei Huang, Jui Yuan Chen, Yi Hsin Ting, Kuo Chang Lu, Yu Lun Chueh, Wen-Wei Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.

Original languageEnglish
Pages (from-to)9457-9462
Number of pages6
JournalACS Nano
Volume8
Issue number9
DOIs
StatePublished - 23 Sep 2014

Keywords

  • in situ TEM
  • InSe
  • nanodevices
  • nonvolatile memory
  • PCRAM
  • phase change

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