Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping

C. Y. Lu, Horng-Chih Lin*, Y. J. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Negative-bias-temperature instability (NBTI) characteristics of strained p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) under dynamic and AC stressing were investigated in this work. The compressive strain in the channel was deliberately induced by a plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) capping layer in this study. It was found that the capping would degrade the NBTI characteristics, although the degradation is relieved when the stress frequency increases. The aggravated NBTI behaviors are ascribed to the higher amount of hydrogen incorporation during SiN deposition.

Original languageEnglish
Pages (from-to)924-929
Number of pages6
JournalMicroelectronics Reliability
Volume47
Issue number6
DOIs
StatePublished - 1 Jun 2007

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