Dynamic I-V Characteristics of an AlGaAs/GaAs-Based Optothyristor for Pulsed Power-Switching Applications

Jian H. Zhao, Dana Larson, Terry Burke, Maurice Weiner, Albert Chin, James M. Ballingall, Tan hua Yu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A high-performance MBE-grown AlGaAs/GaAs-based heterostructure optothyristor has been fabricated and characterized for high-power pulsed switching applications. An LEC undoped semi-insulating GaAs of 650 μ m in thickness was used as the voltage blocking layer and low-temperature GaAs grown at 200°C was used to passivate the surface and to reduce the surface leakage current. The dynamic current-voltage characteristics have been measured up to 115 A and 1974 V, which corresponds to a field intensity of more than 30 kV/cm. The dissipated energy per switching as a function of device voltage has also been determined to be in the range of 2 mJ or lower.

Original languageEnglish
Pages (from-to)161-163
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number3
DOIs
StatePublished - 1 Jan 1992

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