Dynamic gate voltage characteristic of the super self-aligned shunt GaAs FET

Satoshi Makioka*, Yoshiharu Anda, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The off-state shunt GaAs FET, which is the most important for low distortion operation of the high power RF switch 1C, is a very complicated device to analyze the RF voltage. Because the conventional measurement method has an influence on the behavior of the switch, it has not provided the correct measurement value. In this paper, we have realized a measurement method without touching the surface of the switch 1C using EO-probe [2]. As a result we achieved extremely low second and third harmonics of O.odBc and 75.2dBc, respectively at the input power of 35dBm by adoptin SPOT switch IC composed of the multi-gate FET for the thru FET and the stacked-gate FET.

Original languageEnglish
Pages (from-to)2036-2040
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE85-C
Issue number12 SPEC.
StatePublished - 1 Jan 2002

Keywords

  • EO probe
  • GaAs
  • Multi-gate
  • Switch IC

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