Dynamic evolution of conducting nanofilament in resistive switching memories

Jui Yuan Chen, Cheng Lun Hsin, Chun Wei Huang, Chung Hua Chiu, Yu Ting Huang, Su Jien Lin, Wen-Wei Wu*, Lih Juann Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

230 Scopus citations

Abstract

Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current-voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO1-x and ZnO.

Original languageEnglish
Pages (from-to)3671-3677
Number of pages7
JournalNano Letters
Volume13
Issue number8
DOIs
StatePublished - 14 Aug 2013

Keywords

  • In situ TEM
  • RRAM
  • nanofilament
  • redox
  • resistive switching
  • unipolar

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