Dynamic depletion SOI MOSFET model for SPICE

Dennis Sinitsky*, Samuel Fung, Stephen Tang, Pin Su, Mansun Chan, Ping Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


We show using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary RthCth circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with Tsi, Tbox, Tox, W, and L.

Original languageEnglish
Pages (from-to)114-115
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Jan 1998
EventProceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 9 Jun 199811 Jun 1998

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