Dynamic bootstrap voltage technique for high efficiency buck converter in universal serial bus power device supplying system

Wei Chung Chen, Ke-Horng Chen, Chin Long Wey, Ying Hsi Lin, Tsung Yen Tsai, Chen Chih Huang, Chao Cheng Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

For high power universal serial bus (USB) devices, the dynamic bootstrap voltage (DBV) technique is proposed to keep high efficiency over a wide load range, including light and heavy loads. Besides, the silicon area of power management of the system-on-a-chip (Soc) can be effectively reduced to 50% of conventional design with P-type high-side power MOSFET. The test chip fabricated in 0.25μm CMOS process shows 92% peak efficiency from 1mA to 1A. The maximum driving current is higher than 3A with 88 % efficiency. Compared to that without the DBV technique, the efficiency is improved about 28%.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
Pages165-168
Number of pages4
DOIs
StatePublished - 1 Dec 2013
Event2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 - Singapore, Singapore
Duration: 11 Nov 201313 Nov 2013

Publication series

NameProceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013

Conference

Conference2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
CountrySingapore
CitySingapore
Period11/11/1313/11/13

Keywords

  • Dual N-type MOSFETs
  • Dynamic bootstrap capacitance
  • Light-load efficiency

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