dV/dt Breakdown in Power MOSFET's

D. S. Kuo, Chen-Ming Hu, M. H. Chi

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A model for dV/dt breakdown in power MOSFET's is proposed. This model allows quantitative analysis of dV/dt limitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.

Original languageEnglish
Pages (from-to)1-2
Number of pages2
JournalIEEE Electron Device Letters
Volume4
Issue number1
DOIs
StatePublished - 1 Jan 1983

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