Dual-wavelength high-power laser diodes fabricated by selective fluidic self-assembly

Tomoaki Tojo*, Kazuhiko Yamanaka, Brahm Pal Singh, Kazutoshi Onozawa, Daisuke Ueda, Ikuo Soga, Koichi Maezawa, Takashi Mizutani

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We have developed dual-wavelength high-power laser diodes (LDs) with a hybrid integrated solution, in which a 660 nm (red) LD chip and a 780 nm (infrared) LD chip are mounted side-by-side on the same substrate. To achieve the required mounting position accuracy, i.e., the distance between two emitting points is limited to 110±3μm, we have developed a novel mounting technique called selective fluidic self-assembly (S-FSA). In this technique, we used new self-locking structures of guest-host pairs. Bumps formed on the bonding surfaces of the LD chips are used as guests. A substrate with recesses whose shapes correspond to those of the bumps is used as the host. By forming bumps aligned along the waveguide and assigning a rotationally asymmetric shape for the bumps, an accurate and selective mounting is realized. Dual-wavelength LDs fabricated by this technique demonstrated the required positioning accuracy and high-power operation.

Original languageEnglish
Pages (from-to)2568-2571
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
StatePublished - 1 Apr 2005


  • Dual wavelength
  • Fluidic self-assembly
  • Hybrid integration
  • Laser diode
  • Selective mounting
  • Self-locking structure

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