Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin*, Ming-Dou Ker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages707-709
Number of pages3
DOIs
StatePublished - 1 Dec 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period1/11/104/11/10

Keywords

  • Electrostatic discharges (ESD)
  • Radio-frequency integrated circuit (RF IC)
  • Silicon-controlled rectifier (SCR)

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    Lin, C. Y., & Ker, M-D. (2010). Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 707-709). [5667382] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667382