In this work, by using a novel HfLaO high-κ (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples, TaN gate with EWF ∼3.9-4.4 eV and TaN/Pt gate with EWF ∼5.5 eV are shown. In addition, by replacing HfO2 with HfLaO, high κ value and low gate tunneling are maintained, BTI Vth instability is improved by one order. These new findings are correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2 as estimated by the first-principles calculations.