Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric

X. P. Wang; C. Shen; Ming Fu Li; H. Y. Yu; Yiyang Sun; Y. P. Feng; Andy Lim; Hwang Wan Sik; Albert Chin; Y. C. Yeo; Patrick Lo; D. L. Kwong

doi:10.1109/VLSIT.2006.1705191

Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric

X. P. Wang, C. Shen, Ming Fu Li, H. Y. Yu, Yiyang Sun, Y. P. Feng, Andy Lim, Hwang Wan Sik, Albert Chin, Y. C. Yeo, Patrick Lo, D. L. Kwong

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

25 Scopus citations

Abstract

In this work, by using a novel HfLaO high-κ (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples, TaN gate with EWF ∼3.9-4.4 eV and TaN/Pt gate with EWF ∼5.5 eV are shown. In addition, by replacing HfO₂ with HfLaO, high κ value and low gate tunneling are maintained, BTI V_th instability is improved by one order. These new findings are correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO₂ as estimated by the first-principles calculations.

Original language	English
Title of host publication	2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages	9-10
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2006.1705191
State	Published - 1 Dec 2006
Event	2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States Duration: 13 Jun 2006 → 15 Jun 2006

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2006 Symposium on VLSI Technology, VLSIT
Country	United States
City	Honolulu, HI
Period	13/06/06 → 15/06/06

Access to Document

10.1109/VLSIT.2006.1705191

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Wang, X. P., Shen, C., Li, M. F., Yu, H. Y., Sun, Y., Feng, Y. P., Lim, A., Sik, H. W., Chin, A., Yeo, Y. C., Lo, P., & Kwong, D. L. (2006). Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric. In 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers (pp. 9-10). [1705191] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2006.1705191

Wang, X. P. ; Shen, C. ; Li, Ming Fu ; Yu, H. Y. ; Sun, Yiyang ; Feng, Y. P. ; Lim, Andy ; Sik, Hwang Wan ; Chin, Albert ; Yeo, Y. C. ; Lo, Patrick ; Kwong, D. L. / Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric. 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. pp. 9-10 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{d59aa1c867224f1c81349c554eab7d59,

title = "Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric",

abstract = "In this work, by using a novel HfLaO high-κ (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples, TaN gate with EWF ∼3.9-4.4 eV and TaN/Pt gate with EWF ∼5.5 eV are shown. In addition, by replacing HfO2 with HfLaO, high κ value and low gate tunneling are maintained, BTI Vth instability is improved by one order. These new findings are correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2 as estimated by the first-principles calculations.",

author = "Wang, {X. P.} and C. Shen and Li, {Ming Fu} and Yu, {H. Y.} and Yiyang Sun and Feng, {Y. P.} and Andy Lim and Sik, {Hwang Wan} and Albert Chin and Yeo, {Y. C.} and Patrick Lo and Kwong, {D. L.}",

year = "2006",

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day = "1",

doi = "10.1109/VLSIT.2006.1705191",

language = "English",

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series = "Digest of Technical Papers - Symposium on VLSI Technology",

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Wang, XP, Shen, C, Li, MF, Yu, HY, Sun, Y, Feng, YP, Lim, A, Sik, HW, Chin, A, Yeo, YC, Lo, P & Kwong, DL 2006, Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric. in 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers., 1705191, Digest of Technical Papers - Symposium on VLSI Technology, pp. 9-10, 2006 Symposium on VLSI Technology, VLSIT, Honolulu, HI, United States, 13/06/06. https://doi.org/10.1109/VLSIT.2006.1705191

Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric. / Wang, X. P.; Shen, C.; Li, Ming Fu; Yu, H. Y.; Sun, Yiyang; Feng, Y. P.; Lim, Andy; Sik, Hwang Wan; Chin, Albert; Yeo, Y. C.; Lo, Patrick; Kwong, D. L.

2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. p. 9-10 1705191 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric

AU - Wang, X. P.

AU - Shen, C.

AU - Li, Ming Fu

AU - Yu, H. Y.

AU - Sun, Yiyang

AU - Feng, Y. P.

AU - Lim, Andy

AU - Sik, Hwang Wan

AU - Chin, Albert

AU - Yeo, Y. C.

AU - Lo, Patrick

AU - Kwong, D. L.

PY - 2006/12/1

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N2 - In this work, by using a novel HfLaO high-κ (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples, TaN gate with EWF ∼3.9-4.4 eV and TaN/Pt gate with EWF ∼5.5 eV are shown. In addition, by replacing HfO2 with HfLaO, high κ value and low gate tunneling are maintained, BTI Vth instability is improved by one order. These new findings are correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2 as estimated by the first-principles calculations.

AB - In this work, by using a novel HfLaO high-κ (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples, TaN gate with EWF ∼3.9-4.4 eV and TaN/Pt gate with EWF ∼5.5 eV are shown. In addition, by replacing HfO2 with HfLaO, high κ value and low gate tunneling are maintained, BTI Vth instability is improved by one order. These new findings are correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2 as estimated by the first-principles calculations.

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SN - 1424400058

SN - 9781424400058

T3 - Digest of Technical Papers - Symposium on VLSI Technology

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BT - 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers

Y2 - 13 June 2006 through 15 June 2006

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