Dual metal gates with band-edge work functions on novel HfLaO high-k gate dielectric

X. P. Wang, C. Shen, Ming Fu Li, H. Y. Yu, Yiyang Sun, Y. P. Feng, Andy Lim, Hwang Wan Sik, Albert Chin, Y. C. Yeo, Patrick Lo, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In this work, by using a novel HfLaO high-k (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in die HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples. TaN gate with EWF ~3.9-4 4 eV and TaN/Pt gate with EWF ~5.5 eV are shown. In addition, by replacing HfO2with HfLaO, high k value and low gate tunneling are maintained, BTI Vthinstability is improved by one order. These new findings arc correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2as estimated by the first-principles calculations.

Original languageEnglish
Title of host publicationSelected Semiconductor Research
PublisherImperial College Press
Pages369-370
Number of pages2
ISBN (Electronic)9781848164079
ISBN (Print)9781848164062
DOIs
StatePublished - 1 Jan 2011

Fingerprint Dive into the research topics of 'Dual metal gates with band-edge work functions on novel HfLaO high-k gate dielectric'. Together they form a unique fingerprint.

Cite this