Dual-metal gate CMOS devices with rapid-thermal chemical-vapor deposited (RTCVD) Si3N4 gate dielectric were fabricated using a self-aligned process. The gate electrodes are Ti and Mo for the N- and P-MOSFET respectively. Carrier mobilities are comparable to that predicted by the universal mobility model for SiO2. C-V characteristics show good agreement with a simulation that takes quantum-mechanical effects into account, and clearly display the advantage of metal over poly-Si gates.
|Number of pages||2|
|Journal||Digest of Technical Papers-Symposium on VLSI Technology|
|State||Published - 1 Jan 2000|