Dual-metal-gate-integration complementary metal oxide semiconductor process scheme using Ru positive-channel metal oxide semiconductor and TaC negative-channel metal oxide semiconductor gate electrodes

Wen Tung Chang, Tsung-Eong Hsien*, Chung Ju Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This article presents the development of a wet removal process on the integration of complementary metal oxide semiconductor (CMOS) dual metals with Ru for positive-channel metal oxide semiconductor and TaC for negative-channel metal oxide semiconductor on high- k Hf O2 gate dielectric. The integration scheme focused on the wet etching capability for the first metal and the selectivity control on the high- k dielectrics under the metal gate. Using the developed chemical, ceric ammonium nitrate and nitric acid mixture used for Ru metal removal and Hf O2 treated with Ar O2 plasma by selective diluted hydrofluoric wet etching, a CMOS dual-metal-gate structure was achieved with satisfactory device fabrication.

Original languageEnglish
Pages (from-to)1265-1269
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number4
DOIs
StatePublished - 7 Aug 2007

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