This article presents the development of a wet removal process on the integration of complementary metal oxide semiconductor (CMOS) dual metals with Ru for positive-channel metal oxide semiconductor and TaC for negative-channel metal oxide semiconductor on high- k Hf O2 gate dielectric. The integration scheme focused on the wet etching capability for the first metal and the selectivity control on the high- k dielectrics under the metal gate. Using the developed chemical, ceric ammonium nitrate and nitric acid mixture used for Ru metal removal and Hf O2 treated with Ar O2 plasma by selective diluted hydrofluoric wet etching, a CMOS dual-metal-gate structure was achieved with satisfactory device fabrication.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 7 Aug 2007|