Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric

Yee Chia Yeo*, Qiang Lu, Pushkar Ranade, Hideki Takeuchi, Kevin J. Yang, Igor Polishchuk, Tsu Jae King, Chen-Ming Hu, S. C. Song, H. F. Luan, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

95 Scopus citations


We report the first demonstration of a dual-metal gate complementary metal oxide semiconductor (CMOS) technology using titanium (Ti) and molybdenum (Mo) as the gate electrodes for the N-metal oxide semiconductor field effect transistors (N-MOSFETs) and P-metal oxide semiconductor field effect transistors (P-MOSFETs), respectively. The gate dielectric stack consists of a silicon oxy-nitride interracial layer and a silicon nitride (Si3N4) dielectric layer formed by a rapid-thermal chemical vapor deposition (RTCVD) process. C-V characteristics show negligible gate depletion. Carrier mobilities comparable to that predicted by the, universal mobility model for silicon dioxide (SiO2) are observed.

Original languageEnglish
Pages (from-to)227-229
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - 1 May 2001


  • Dielectric materials
  • Dual-metal gate
  • Molybdenum
  • Titanium
  • Titanium compounds

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