Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement

Hsiao-Wen Zan*, Wei Tsung Chen, Chung Cheng Yeh, Hsiu Wen Hsueh, Chuang Chuang Tsai, Hsin-Fei Meng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

In this study, we propose a floating dual gate (FDG) indium-gallium-zinc- oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (φ) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (μ), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (Vth) from -5.0 to +7.9 V without an additional back gate power supply.

Original languageEnglish
Article number153506
JournalApplied Physics Letters
Volume98
Issue number15
DOIs
StatePublished - 11 Apr 2011

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