Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement

Hsiao-Wen Zan; Wei Tsung Chen; Chung Cheng Yeh; Hsiu Wen Hsueh; Chuang Chuang Tsai; Hsin-Fei Meng

doi:10.1063/1.3578403

Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement

Hsiao-Wen Zan^*, Wei Tsung Chen, Chung Cheng Yeh, Hsiu Wen Hsueh, Chuang Chuang Tsai, Hsin-Fei Meng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

In this study, we propose a floating dual gate (FDG) indium-gallium-zinc- oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (φ) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (μ), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (Vth) from -5.0 to +7.9 V without an additional back gate power supply.

Original language	English
Article number	153506
Journal	Applied Physics Letters
Volume	98
Issue number	15
DOIs	https://doi.org/10.1063/1.3578403
State	Published - 11 Apr 2011

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@article{5aa514abbbe84699a8b6f6c4e1690636,

title = "Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement",

abstract = "In this study, we propose a floating dual gate (FDG) indium-gallium-zinc- oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (φ) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (μ), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (Vth) from -5.0 to +7.9 V without an additional back gate power supply.",

author = "Hsiao-Wen Zan and Chen, {Wei Tsung} and Yeh, {Chung Cheng} and Hsueh, {Hsiu Wen} and Tsai, {Chuang Chuang} and Hsin-Fei Meng",

year = "2011",

month = apr,

day = "11",

doi = "10.1063/1.3578403",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement. / Zan, Hsiao-Wen; Chen, Wei Tsung; Yeh, Chung Cheng; Hsueh, Hsiu Wen; Tsai, Chuang Chuang; Meng, Hsin-Fei.

In: Applied Physics Letters, Vol. 98, No. 15, 153506, 11.04.2011.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement

AU - Zan, Hsiao-Wen

AU - Chen, Wei Tsung

AU - Yeh, Chung Cheng

AU - Hsueh, Hsiu Wen

AU - Tsai, Chuang Chuang

AU - Meng, Hsin-Fei

PY - 2011/4/11

Y1 - 2011/4/11

N2 - In this study, we propose a floating dual gate (FDG) indium-gallium-zinc- oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (φ) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (μ), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (Vth) from -5.0 to +7.9 V without an additional back gate power supply.

AB - In this study, we propose a floating dual gate (FDG) indium-gallium-zinc- oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (φ) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (μ), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (Vth) from -5.0 to +7.9 V without an additional back gate power supply.

UR - http://www.scopus.com/inward/record.url?scp=79954584267&partnerID=8YFLogxK

U2 - 10.1063/1.3578403

DO - 10.1063/1.3578403

M3 - Article

AN - SCOPUS:79954584267

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 153506

ER -