In addition to the gate electrode at the bottom, a dual-gate InGaZnO4 (a-IGZO) thin film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage of the TFT using the bottom-gate in its normal operation can be controlled by the top-gate. Based on this phenomenon, a new concept of using the top-gate to compensate threshold voltage variation is proposed. This new technique is demonstrated in two pixel circuits of active-matrix organic light-emitting diode and verified by the measurement results.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 2012|
|Event||49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States|
Duration: 3 Jun 2012 → 8 Jun 2012