Dual-gate igzo tft for threshold-voltage compensation in amoled pixel circuit

Lu Sheng Chou, Hao Lin Chiu, Bo Cheng Chen, Ya Hsiang Tai

Research output: Contribution to journalConference article

12 Scopus citations

Abstract

In addition to the gate electrode at the bottom, a dual-gate InGaZnO4 (a-IGZO) thin film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage of the TFT using the bottom-gate in its normal operation can be controlled by the top-gate. Based on this phenomenon, a new concept of using the top-gate to compensate threshold voltage variation is proposed. This new technique is demonstrated in two pixel circuits of active-matrix organic light-emitting diode and verified by the measurement results.

Original languageEnglish
Pages (from-to)768-771
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume43
Issue number1
DOIs
StatePublished - 2012
Event49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States
Duration: 3 Jun 20128 Jun 2012

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