Dual-central-wavelength passively mode-locked diffusion-bonded Nd:YVO4/Nd:GdVO4 laser with a semiconductor saturable absorber mirror

F. L. Chang, C. L. Sung, T. L. Huang, T. W. Wu, H. H. Cho, H. C. Liang, Yung-Fu Chen*

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations


A dual-central-wavelength passively mode-locked laser with full modulation in the 0.31 THz optical beating is achieved by using a diffusion-bonded Nd:YVO4/Nd:GdVO4 crystal and a semiconductor saturable absorber mirror. The output power of the dual-band emission is well balanced by tuning the focal position of the pump waist. At a pump power of 13 W, the total output power is up to 2.7 W with a repetition rate of 297.9 MHz. The autocorrelation traces clearly reveal the synchronization of the dual-band emission. Moreover, an analytical model is developed to manifest the multi-pulse structure caused by the etalon effect of the gain medium. More important, we experimentally verify that the etalon effect can be completely eliminated by using the wedge-cut diffusion-bonded Nd:YVO4/Nd:GdVO4 crystal.

Original languageEnglish
Article number085803
JournalLaser Physics Letters
Issue number8
StatePublished - 1 Aug 2017


  • diffusion bonded
  • dual wavelength
  • mode locked
  • saturable absorber

Fingerprint Dive into the research topics of 'Dual-central-wavelength passively mode-locked diffusion-bonded Nd:YVO<sub>4</sub>/Nd:GdVO<sub>4</sub> laser with a semiconductor saturable absorber mirror'. Together they form a unique fingerprint.

  • Cite this