Our study shows that the isolation-degradation in semi-insulating GaAs substrate is closely related to dry processes during the device fabrication. It was found that EL2, the major electron trap in undoped LEC semi-insulating GaAs, could be passivated by plasma-assisted etchings or depositions. The passivation of EL2 causes surface leakage and leads to crosstalk in GaAs ICs.
|Title of host publication||Materials Research Society Symposia Proceedings|
|Editors||Noble M. Johnson, Stephen G. Bishop, George D. Watkins|
|Publisher||Materials Research Soc|
|Number of pages||4|
|State||Published - 1 Dec 1985|
|Name||Materials Research Society Symposia Proceedings|