DRY-PROCESSING INDUCED ISOLATION-DEGRADATION IN GaAs INTEGRATED CIRCUITS.

Mau-Chung Chang*, C. P. Lee, N. H. Sheng, C. G. Kirkpatrick, R. T. Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Our study shows that the isolation-degradation in semi-insulating GaAs substrate is closely related to dry processes during the device fabrication. It was found that EL2, the major electron trap in undoped LEC semi-insulating GaAs, could be passivated by plasma-assisted etchings or depositions. The passivation of EL2 causes surface leakage and leads to crosstalk in GaAs ICs.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsNoble M. Johnson, Stephen G. Bishop, George D. Watkins
PublisherMaterials Research Soc
Pages415-418
Number of pages4
ISBN (Print)0931837111
DOIs
StatePublished - 1 Dec 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume46
ISSN (Print)0272-9172

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