Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

Kow-Ming Chang*, T. H. Yeh, S. W. Wang, C. H. Li, J. Y. Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl2/HBr/O2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.

Original languageEnglish
Pages (from-to)22-26
Number of pages5
JournalMaterials Chemistry and Physics
Volume45
Issue number1
DOIs
StatePublished - Jul 1996

Keywords

  • Chlorine-based plasmas
  • Electron cyclotron resonance
  • Polysilicon etching

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