Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

Kow-Ming Chang; T. H. Yeh; S. W. Wang; C. H. Li; J. Y. Yang

doi:10.1016/0254-0584(96)80042-3

Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

Kow-Ming Chang^*, T. H. Yeh, S. W. Wang, C. H. Li, J. Y. Yang

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl₂/HBr/O₂ mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.

Original language	English
Pages (from-to)	22-26
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	45
Issue number	1
DOIs	https://doi.org/10.1016/0254-0584(96)80042-3
State	Published - 1 Jan 1996

Keywords

Chlorine-based plasmas
Electron cyclotron resonance
Polysilicon etching

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10.1016/0254-0584(96)80042-3

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title = "Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor",

abstract = "Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl2/HBr/O2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.",

keywords = "Chlorine-based plasmas, Electron cyclotron resonance, Polysilicon etching",

author = "Kow-Ming Chang and Yeh, {T. H.} and Wang, {S. W.} and Li, {C. H.} and Yang, {J. Y.}",

year = "1996",

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doi = "10.1016/0254-0584(96)80042-3",

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T1 - Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

AU - Chang, Kow-Ming

AU - Yeh, T. H.

AU - Wang, S. W.

AU - Li, C. H.

AU - Yang, J. Y.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl2/HBr/O2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.

AB - Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl2/HBr/O2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.

KW - Chlorine-based plasmas

KW - Electron cyclotron resonance

KW - Polysilicon etching

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DO - 10.1016/0254-0584(96)80042-3

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