Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemistries in an inductively coupled plasma

J. Tonotani; T. Iwamoto; F. Sato; K. Hattori; S. Ohmi; H. Iwai

Dry etching characteristics of TiN film using Ar/CHF₃, Ar/Cl₂, and Ar/BCl₃ gas chemistries in an inductively coupled plasma

J. Tonotani^*, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

RIE characteristics of TiN film were studied. Although TiN is not etched in the case of using Ar as the etching gas, the etching rate is increased by the addition of CHF₃, BCl₃, or Cl₂. However, the etching rates differ among these additional gases. Furthermore, it was found that the etching profile is nontapered in the case of Cl₂ addition and tapered in the case of BCl₃ addition.

Original language	English
Pages (from-to)	2163-2168
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	5
State	Published - Sep 2003

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title = "Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemistries in an inductively coupled plasma",

abstract = "RIE characteristics of TiN film were studied. Although TiN is not etched in the case of using Ar as the etching gas, the etching rate is increased by the addition of CHF3, BCl3, or Cl2. However, the etching rates differ among these additional gases. Furthermore, it was found that the etching profile is nontapered in the case of Cl2 addition and tapered in the case of BCl3 addition.",

author = "J. Tonotani and T. Iwamoto and F. Sato and K. Hattori and S. Ohmi and H. Iwai",

year = "2003",

month = sep,

language = "English",

volume = "21",

pages = "2163--2168",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "5",

}

Dry etching characteristics of TiN film using Ar/CHF₃, Ar/Cl₂, and Ar/BCl₃ gas chemistries in an inductively coupled plasma. / Tonotani, J.; Iwamoto, T.; Sato, F.; Hattori, K.; Ohmi, S.; Iwai, H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5, 09.2003, p. 2163-2168.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemistries in an inductively coupled plasma

AU - Tonotani, J.

AU - Iwamoto, T.

AU - Sato, F.

AU - Hattori, K.

AU - Ohmi, S.

AU - Iwai, H.

PY - 2003/9

Y1 - 2003/9

N2 - RIE characteristics of TiN film were studied. Although TiN is not etched in the case of using Ar as the etching gas, the etching rate is increased by the addition of CHF3, BCl3, or Cl2. However, the etching rates differ among these additional gases. Furthermore, it was found that the etching profile is nontapered in the case of Cl2 addition and tapered in the case of BCl3 addition.

AB - RIE characteristics of TiN film were studied. Although TiN is not etched in the case of using Ar as the etching gas, the etching rate is increased by the addition of CHF3, BCl3, or Cl2. However, the etching rates differ among these additional gases. Furthermore, it was found that the etching profile is nontapered in the case of Cl2 addition and tapered in the case of BCl3 addition.

UR - http://www.scopus.com/inward/record.url?scp=0242509076&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0242509076

VL - 21

SP - 2163

EP - 2168

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 5

ER -

Dry etching characteristics of TiN film using Ar/CHF₃, Ar/Cl₂, and Ar/BCl₃ gas chemistries in an inductively coupled plasma

Abstract

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