RIE characteristics of TiN film were studied. Although TiN is not etched in the case of using Ar as the etching gas, the etching rate is increased by the addition of CHF3, BCl3, or Cl2. However, the etching rates differ among these additional gases. Furthermore, it was found that the etching profile is nontapered in the case of Cl2 addition and tapered in the case of BCl3 addition.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 2003|