Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemistries in an inductively coupled plasma

J. Tonotani*, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

RIE characteristics of TiN film were studied. Although TiN is not etched in the case of using Ar as the etching gas, the etching rate is increased by the addition of CHF3, BCl3, or Cl2. However, the etching rates differ among these additional gases. Furthermore, it was found that the etching profile is nontapered in the case of Cl2 addition and tapered in the case of BCl3 addition.

Original languageEnglish
Pages (from-to)2163-2168
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number5
StatePublished - Sep 2003

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