Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with Al2O3 capping layer

Chih Wei Yang, Yean Kuan Fang*, Chien Hao Chen, Wen De Wang, Tin Yu Lin, Ming Fang Wang, Tuo-Hung Hou, Juing Yi Cheng, Liang Gi Yao, Shyh Chang Chen, Chen Hua Yu, Mong Song Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The electrical properties of poly-silicon gate MOS capacitors with HfO2 gate dielectric, with and without Al2O3 capping layer, were investigated. Without the capping layer, the experimental results show that an unacceptably high gate leakage current due to the interaction between HfO2 and poly-silicon was observed; while with a thin Al2O3 layer capping on 1.61 nm equivalent oxide thickness (EOT) HfO2 dielectric the gate leakage current density can be reduce to approximately 10-7 A/cm2, which is nearly seven orders (107) in magnitude lower than that of using pure oxide with identical EOT.

Original languageEnglish
Pages (from-to)1223-1225
Number of pages3
JournalElectronics Letters
Volume38
Issue number20
DOIs
StatePublished - 26 Sep 2002

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