Abstract
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The V-{\mathrm{ th}} is found to shift negatively when increasing the I -{D} - V -{G} measurement condition V -{D} from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length ( L -{\mathrm{ eff}} ) being shorter than the mask channel length ( L ). Using the transmission line method to extract L -{\mathrm{ eff}} , we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.
Original language | English |
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Pages (from-to) | 685-690 |
Number of pages | 6 |
Journal | IEEE Journal of the Electron Devices Society |
Volume | 6 |
DOIs | |
State | Published - 17 May 2018 |
Keywords
- Bottom gate TFTs
- drain induced barrier lowing (DIBL)
- indium gallium zinc oxide (IGZO)
- oxygen vacancy