Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Chung I. Yang; Ting Chang Chang; Po Yung Liao; Li Hui Chen; Bo Wei Chen; Wu-Ching Chou; Guan Fu Chen; Sung Chun Lin; Cheng Yen Yeh; Cheng Ming Tsai; Ming Chang Yu; Shengdong Zhang

doi:10.1109/JEDS.2018.2837682

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Chung I. Yang, Ting Chang Chang^*, Po Yung Liao, Li Hui Chen, Bo Wei Chen, Wu-Ching Chou, Guan Fu Chen, Sung Chun Lin, Cheng Yen Yeh, Cheng Ming Tsai, Ming Chang Yu, Shengdong Zhang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The V-{\mathrm{ th}} is found to shift negatively when increasing the I -{D} - V -{G} measurement condition V -{D} from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length ( L -{\mathrm{ eff}} ) being shorter than the mask channel length ( L ). Using the transmission line method to extract L -{\mathrm{ eff}} , we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.

Original language	English
Pages (from-to)	685-690
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	6
DOIs	https://doi.org/10.1109/JEDS.2018.2837682
State	Published - 17 May 2018

Keywords

Bottom gate TFTs
drain induced barrier lowing (DIBL)
indium gallium zinc oxide (IGZO)
oxygen vacancy

Access to Document

10.1109/JEDS.2018.2837682

Fingerprint Dive into the research topics of 'Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors'. Together they form a unique fingerprint.

Cite this

Yang, C. I., Chang, T. C., Liao, P. Y., Chen, L. H., Chen, B. W., Chou, W-C., Chen, G. F., Lin, S. C., Yeh, C. Y., Tsai, C. M., Yu, M. C., & Zhang, S. (2018). Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors. IEEE Journal of the Electron Devices Society, 6, 685-690. https://doi.org/10.1109/JEDS.2018.2837682

Yang, Chung I. ; Chang, Ting Chang ; Liao, Po Yung ; Chen, Li Hui ; Chen, Bo Wei ; Chou, Wu-Ching ; Chen, Guan Fu ; Lin, Sung Chun ; Yeh, Cheng Yen ; Tsai, Cheng Ming ; Yu, Ming Chang ; Zhang, Shengdong. / Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors. In: IEEE Journal of the Electron Devices Society. 2018 ; Vol. 6. pp. 685-690.

@article{5a4fd42afd1f4435a3701580d313edbd,

title = "Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors",

abstract = "This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The V-{\mathrm{ th}} is found to shift negatively when increasing the I -{D} - V -{G} measurement condition V -{D} from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length ( L -{\mathrm{ eff}} ) being shorter than the mask channel length ( L ). Using the transmission line method to extract L -{\mathrm{ eff}} , we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.",

keywords = "Bottom gate TFTs, drain induced barrier lowing (DIBL), indium gallium zinc oxide (IGZO), oxygen vacancy",

author = "Yang, {Chung I.} and Chang, {Ting Chang} and Liao, {Po Yung} and Chen, {Li Hui} and Chen, {Bo Wei} and Wu-Ching Chou and Chen, {Guan Fu} and Lin, {Sung Chun} and Yeh, {Cheng Yen} and Tsai, {Cheng Ming} and Yu, {Ming Chang} and Shengdong Zhang",

year = "2018",

month = may,

day = "17",

doi = "10.1109/JEDS.2018.2837682",

language = "English",

volume = "6",

pages = "685--690",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Yang, CI, Chang, TC, Liao, PY, Chen, LH, Chen, BW, Chou, W-C, Chen, GF, Lin, SC, Yeh, CY, Tsai, CM, Yu, MC & Zhang, S 2018, 'Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors', IEEE Journal of the Electron Devices Society, vol. 6, pp. 685-690. https://doi.org/10.1109/JEDS.2018.2837682

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors. / Yang, Chung I.; Chang, Ting Chang; Liao, Po Yung; Chen, Li Hui; Chen, Bo Wei; Chou, Wu-Ching; Chen, Guan Fu; Lin, Sung Chun; Yeh, Cheng Yen; Tsai, Cheng Ming; Yu, Ming Chang; Zhang, Shengdong.

In: IEEE Journal of the Electron Devices Society, Vol. 6, 17.05.2018, p. 685-690.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

AU - Yang, Chung I.

AU - Chang, Ting Chang

AU - Liao, Po Yung

AU - Chen, Li Hui

AU - Chen, Bo Wei

AU - Chou, Wu-Ching

AU - Chen, Guan Fu

AU - Lin, Sung Chun

AU - Yeh, Cheng Yen

AU - Tsai, Cheng Ming

AU - Yu, Ming Chang

AU - Zhang, Shengdong

PY - 2018/5/17

Y1 - 2018/5/17

N2 - This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The V-{\mathrm{ th}} is found to shift negatively when increasing the I -{D} - V -{G} measurement condition V -{D} from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length ( L -{\mathrm{ eff}} ) being shorter than the mask channel length ( L ). Using the transmission line method to extract L -{\mathrm{ eff}} , we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.

AB - This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The V-{\mathrm{ th}} is found to shift negatively when increasing the I -{D} - V -{G} measurement condition V -{D} from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length ( L -{\mathrm{ eff}} ) being shorter than the mask channel length ( L ). Using the transmission line method to extract L -{\mathrm{ eff}} , we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.

KW - Bottom gate TFTs

KW - drain induced barrier lowing (DIBL)

KW - indium gallium zinc oxide (IGZO)

KW - oxygen vacancy

UR - http://www.scopus.com/inward/record.url?scp=85047222710&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2018.2837682

DO - 10.1109/JEDS.2018.2837682

M3 - Article

AN - SCOPUS:85047222710

VL - 6

SP - 685

EP - 690

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

ER -