Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Chung I. Yang, Ting Chang Chang*, Po Yung Liao, Li Hui Chen, Bo Wei Chen, Wu-Ching Chou, Guan Fu Chen, Sung Chun Lin, Cheng Yen Yeh, Cheng Ming Tsai, Ming Chang Yu, Shengdong Zhang

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The V-{\mathrm{ th}} is found to shift negatively when increasing the I -{D} - V -{G} measurement condition V -{D} from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length ( L -{\mathrm{ eff}} ) being shorter than the mask channel length ( L ). Using the transmission line method to extract L -{\mathrm{ eff}} , we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.

Original languageEnglish
Pages (from-to)685-690
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
StatePublished - 17 May 2018

Keywords

  • Bottom gate TFTs
  • drain induced barrier lowing (DIBL)
  • indium gallium zinc oxide (IGZO)
  • oxygen vacancy

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