Drain-Bias Transient Instability of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Yi Hsui Lai, Ruei Ping Lin, Tuo Hung Hou*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

High-voltage amorphous indium-gallium-zinc oxide thin-film transistors can be monolithically integrated into the system-on-chip platform as input-output bridges. However, a transient instability showing substantial ON-current degradation under high drain bias is discovered. This drain-bias transient instability depends on the stress time of less than 10 s and both drain and gate stress voltages. It is attributed to the charge trapping in local oxygen vacancies with shallow energy levels and the migration of oxygen ions near the drain. We found that oxygen vacancies are induced by metal contacts. An elevated-metal structure suppresses the transient instability by separating the metal contact region farther away from the channel compared with the conventional top-contact structure.

Original languageEnglish
Article number9165213
Pages (from-to)4526-4529
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume67
Issue number10
DOIs
StatePublished - Oct 2020

Keywords

  • Amorphous indium-gallium-zinc oxide (a-IGZO)
  • elevated-metal (EM) structure
  • input-output (I/O) bridge
  • system on chip (SoC)
  • thin-film transistor (TFT)
  • transient instability

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