Double superstructures in InGaN/GaN nano-pyramid arrays

Chiao Yun Chang, Heng Li, Kuo Bin Hong, Ya Yu Yang, Wei Chih Lai, Tien-chang Lu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes.

Original languageEnglish
Pages (from-to)275-279
Number of pages5
JournalSuperlattices and Microstructures
Volume86
DOIs
StatePublished - 11 Aug 2015

Keywords

  • InGaN/GaN MQWs
  • LEDs
  • Nanopyramid

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