Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

Uio Pu Chiou, Jia Min Shieh, Chih Chao Yang, Wen Hsien Huang, Yo Tsung Kao, Fu-Ming Pan

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (μFE) and adjustable threshold voltages (Vth). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375°C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high μFE of 370 cm2/V-s, a steep subthreshold slope of 90 mV/decade, and a low Vth of -0.64 V. When biased with the double-gate driving mode, the device shows a tunable Vth value extending from -1 V up to 2.7 V.

Original languageEnglish
Article number203501
JournalApplied Physics Letters
Volume103
Issue number20
DOIs
StatePublished - 11 Nov 2013

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