Doping profiles studied by scanning tunneling spectroscopy

Yi Chiu*, M. L. Reed, T. E. Schlesinger

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Tunneling spectra have been measured at various locations on uniformly doped, ion-implanted, and epitaxial silicon samples. We find that the I-V characteristics consistently vary with the variation of doping concentrations. Significant differences in the I-V curves are observed between n- and p-type samples. Combined with the high resolution of scanning tunneling microscopes (STM), this principle can be used to obtain two-dimensional doping profiles in submicron VLSI circuits.

Original languageEnglish
Pages (from-to)1715-1716
Number of pages2
JournalApplied Physics Letters
Volume60
Issue number14
DOIs
StatePublished - 1 Dec 1992

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