Dopant effect on intrinsic diffusivity in nickel silicide

H. Takai*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The effect of P on the diffusivity of Ni and Si in Ni2Si has been studied by analyzing the growth kinetics of Ni2Si on P-doped and undoped polycrystalline Si films using W markers. The growth of Ni2Si during the reaction of Ni and the P-doped Si films is faster than that of Ni and the undoped Si films. Marker analysis showed that the dopant does not affect the activation energies of diffusion; rather it increases greatly the preexponential factor of the diffusion of Si. The dopant effect has been examined in terms of the correlation factor and the entropy factor.

Original languageEnglish
Pages (from-to)8121-8130
Number of pages10
JournalPhysical Review B
Volume38
Issue number12
DOIs
StatePublished - 1 Jan 1988

Fingerprint Dive into the research topics of 'Dopant effect on intrinsic diffusivity in nickel silicide'. Together they form a unique fingerprint.

Cite this