Domain structure study of SrBi 2 Ta 2 O 9 ferroelectric thin films by scanning capacitance microscopy

Ching Chich Leu*, Chih Yuan Chen, Chao-Hsin Chien, Mao Nan Chang, Fan Yi Hsu, Chen Ti Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

66 Scopus citations

Abstract

The domain structure study of SrBi 2 Ta 2 O 9 ferroelectric thin films using scanning capacitance microscopy was presented. A sharp image contrast was found to be induced between the nanosized domains owing to the various polarities. The analysis showed that the reversal polarization process of a ferroelectric domain was found to be much easier inside a large grain than in a small grain.

Original languageEnglish
Pages (from-to)3493-3495
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number20
DOIs
StatePublished - 19 May 2003

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